Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Dongsu | - |
dc.contributor.author | Song, Chong-Myeong | - |
dc.contributor.author | Heo, Su Jin | - |
dc.contributor.author | Pyo, Goeun | - |
dc.contributor.author | Kim, Dongha | - |
dc.contributor.author | Lee, Ji Hwan | - |
dc.contributor.author | Park, Kyung-Ho | - |
dc.contributor.author | Lee, Shinbuhm | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.contributor.author | Jang, Jae Eun | - |
dc.date.accessioned | 2024-01-30T00:40:12Z | - |
dc.date.available | 2024-01-30T00:40:12Z | - |
dc.date.created | 2023-08-17 | - |
dc.date.issued | 2023-07 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/47687 | - |
dc.description.abstract | To improve performances of nonvolatile charge trap flash memory devices, we propose an in situ Hf0.5Zr0.5O2 (HZO)/HfO2/Al2O3 stacked structure, which is compatible for Si with the metal-oxide-semiconductor (MOS) process based on all atomic layer deposition. Since the appropriate bandgap difference between Al2O3 and HfO2, stable charge trap operation is achieved. High-quality ferroelectric HZO film characteristics were showed by minimizing defects and Si diffusion through the sub-layer of Al2O3/HfO2. Therefore, HZO as a blocking layer enhances the memory performance of the charge trap structure due to its specific polarization effect. The proposed device has the high polarization characteristics of HZO (2Pr > 20 μ C/cm2) along with a MOS-cap window (>4 V), good retention capability (>10 years), fast program/erase response operation times (<200 μ s ), and strong durability (>105 cycles) while operating as a form of single level cell. By comparing Al2O3 and ferroelectric HZO as a blocking layer of the charge trap device, we confirmed that the HZO/HfO2/Al2O3 multi-layer structure had excellent characteristics according to various memory performance indicators. Our proposed high-performance charge trap flash memory can be employed in various applications, including Si-based three-dimensional structures with artificial intelligence systems. © 2023 Author(s). | - |
dc.language | English | - |
dc.publisher | American Institute of Physics | - |
dc.title | Nonvolatile flash memory device with ferroelectric blocking layer via in situ ALD process | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/5.0123608 | - |
dc.identifier.scopusid | 2-s2.0-85166092810 | - |
dc.identifier.bibliographicCitation | Applied Physics Letters, v.123, no.4 | - |
dc.description.isOpenAccess | FALSE | - |
dc.subject.keywordPlus | FLOATING-GATE | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.citation.number | 4 | - |
dc.citation.title | Applied Physics Letters | - |
dc.citation.volume | 123 | - |
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