Characteristics of Cu2ZnSnSe4 Film Formed by Using Co-sputtered Precursors and Selenization
- Title
- Characteristics of Cu2ZnSnSe4 Film Formed by Using Co-sputtered Precursors and Selenization
- Author(s)
- Hong, Sungwook ; Kim, Chan ; Park, Sang-Choel ; Rhee, Ilsu ; Kim, Dae-Hwan ; Kang, Jin-Kyu
- Issued Date
- 2012
- Citation
- Molecular Crystals and Liquid Crystals, v.565, pp.147 - 152
- Type
- Article
- Author Keywords
- CZTSe ; solar cell ; band gap energy
- Keywords
- Annealing ; Annealing Temperatures ; Band Gap Energy ; Cobalt ; COPPER ; CZTSe ; Energy Gap ; Rapid Thermal Process ; Rapid Thermal Processing ; Selenium ; Selenization ; Soda Lime Glass ; SOLAR-CELLS ; Solar Cell ; Solar Cells ; THIN-FILMS ; Tin ; Tungsten Halogen Lamp ; Various Substrates ; Z Transforms ; Zinc
- ISSN
- 1542-1406
- Abstract
- A Cu 2ZnSnSe 4 (CZTSe) film was formed by the selenization of Cu(Zn, Sn) (CZT) alloy precursors. The CZT precursor was prepared by depositing zinc onto a layer of Cu-Sn co-sputtered on molybdenum-coated soda-lime glass. Selenium was evaporated on the CZT precursor. The CZTSe film was then annealed for a minute at various substrate temperatures ranging from 350°C to 650°C in steps of 50°C in a rapid thermal process using tungsten halogen lamps. The lattice parameters of the CZTSe annealed at temperatures over 500°C were found to be a = 5.709 Å and c = 11.351 Å. We also found that the energy gap of the CZTSe was 1.137 eV, which was independent of the annealing temperature. © 2012 Kyungil University.
- Publisher
- Taylor and Francis Ltd.
- Related Researcher
-
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Kim, Dae-Hwan
- Research Interests
-
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- Appears in Collections:
- Division of Energy & Environmental Technology 1. Journal Articles
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