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Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability

Recovery Mechanism of Degraded Black Phosphorus Field-Effect Transistors by 1,2-Ethanedithiol Chemistry and Extended Device Stability
Kwak, Do HyunRa, Hyun SooYang, Jin HoonJeong, Min HyeLee, A YoungLee, Won KiHwang, Jun YeonLee, Joo HyoungLee, Jong Soo
DGIST Authors
Lee, Jong Soo
Issue Date
Small, 14(6)
Article Type
Article in Press
Atomic force microscopyDensity functional theoryOptoelectronic devicesPhosphoric acidPhosphorusRecoverySemiconductor devicesTransistorsX ray photoelectron spectroscopy1,2-ethanedithiolDevice characteristicsHexagonal boron nitrideMaterial characteristicsOptoelectronic applicationsRecovering effectRecovery mechanismsUnderlying principlesField effect transistors
Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Wiley-VCH Verlag
Related Researcher
  • Author Lee, Jong-Soo MNEDL(Multifunctional Nanomaterials & Energy Devices Lab)
  • Research Interests Design of new type of multifunctional nanoparticles for energy-related devices; 다기능성 나노재료; 무기물 태양전지; 열전소자
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Department of Energy Science and EngineeringMNEDL(Multifunctional Nanomaterials & Energy Devices Lab)1. Journal Articles

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