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Department of Electrical Engineering and Computer Science
Circuits And Systems for Signal Processing Laboratory
2. Conference Papers
A 353mW 112Gb/s Discrete Multitone Wireline Receiver Datapath with Time-Based ADC in 5nm FinFET
Lee, Jaewon
;
Francese, Pier-Andrea
;
Brandli, Matthias
;
Morf, Thomas
;
Kossel, Marcel
;
Jang, Seoyoung
;
Kim, Gain
Department of Electrical Engineering and Computer Science
Circuits And Systems for Signal Processing Laboratory
2. Conference Papers
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Title
A 353mW 112Gb/s Discrete Multitone Wireline Receiver Datapath with Time-Based ADC in 5nm FinFET
Issued Date
2025-02-17
Citation
International Solid-State Circuits Conference, pp.144 - 146
Type
Conference Paper
ISBN
9798331541019
ISSN
2376-8606
Abstract
The growing demand for higher communication bandwidth between processors through wired interconnects in large-scale servers has been driving the need to increase the perlane data rate beyond the current 112Gb/s. Recently demonstrated analog-to-digital converter (ADC)-based receiver (RX) prototypes with >100Gb/s data rate typically employ a parallel feed-forward equalizer (FFE) with a large number of taps, 1-tap decision feedback equalizer (DFE) [1-5], and maximum likelihood sequence estimator (MLSE) as option [6-8]. As the data rate grows exponentially, the pulse response length and the number of corresponding inter-symbol interference (ISI) cursors increase accordingly [5,8]. As the length of the pulse response gets doubled, the FFE tap count also needs to be increased accordingly, which results in substantial area and power overhead. The DFE feedback loop timing closure also gets more stringent as Baudrate increases [9]. With an increased pulse amplitude modulation (PAM) order, the DFE and MLSE design complexity increases exponentially [6-8]. While a >100Gb/s PAM-4 transceiver (TRX) can effectively equalize smooth channels [2-5], ripples and notches in the frequency response of the channel can significantly degrade the equalization performance of the current PAM-4 TRX. © 2025 IEEE.
URI
http://hdl.handle.net/20.500.11750/58273
DOI
10.1109/ISSCC49661.2025.10904707
Publisher
IEEE Solid-State Circuits Society
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