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An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS
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Title
An 86.71875-GHz RF Transceiver for 57.8125-Gb/s Plastic Waveguide Links With a CDR-Assisted Carrier Synchronization Technique in 28-nm CMOS
Issued Date
2025-11
Citation
IEEE Journal of Solid-State Circuits, v.60, no.11, pp.4242 - 4251
Type
Article
Author Keywords
pulse-amplitude modulation-4 (PAM-4)Carrier synchronizationclock and data recovery (CDR)phase-locked loop (PLL)RF transceiverwaveguide link
ISSN
0018-9200
Abstract
This article presents an 86.71875-GHz RF transceiver IC featuring a fully integrated clock and data recovery (CDR)-assisted carrier synchronization loop (CSL) for waveguide links. The carrier frequency of 86.71875 GHz is chosen to be the third harmonic of the baseband null frequency of 28.90625 GHz, and the carrier synchronization is achieved using a baseband CDR instead of power-and area-intensive RF circuits. The IC, fabricated in 28-nm CMOS, demonstrates 57.8125-Gb/s pulse-amplitude modulation-4 (PAM-4) data transmission over a 1.5-m waveguide channel while improving the timing margin by 38% compared to conventional methods. The Tx and Rx ICs occupying an area of 1.98 × 0.95 mm2 consume 190.1 and 117 mW at 57.8125 Gb/s, respectively. The test chip achieves the figure of merit (FoM) of 3.5 pJ/b/m in terms of throughput–distance and energy efficiency. © IEEE.
URI
http://hdl.handle.net/20.500.11750/58325
DOI
10.1109/JSSC.2025.3554002
Publisher
Institute of Electrical and Electronics Engineers
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Kim, Gain김가인

Department of Electrical Engineering and Computer Science

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