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Semiconductor memory and method of manufacturing the same
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- Title
- Semiconductor memory and method of manufacturing the same
- Alternative Title
- Carbon electrode for dye-sensitized betavoltaic battery, Betavoltaic battery using the same and manufacturing method thereof
- Country
- UN
- Application Date
- 1991-01-28
- Application No.
- 07646496
- Registration Date
- 1993-02-16
- Publication No.
- 05187566
- Assignee
- Kabushiki Kaisha Toshiba
- Abstract
-
In a semiconductor memory of the invention, the source or drain of a transfer gate MOS transistor is electrically connected to a charge storage first conductive layer through a third conductive layer.
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