Cited 0 time in webofscience Cited 0 time in scopus

Metal-Insulator-Metal tunnel diode with various materials and structural designs for rectifying effect

Title
Metal-Insulator-Metal tunnel diode with various materials and structural designs for rectifying effect
Translated Title
정류 효과를 위한 다양한 재료 및 구조적 디자인의 금속-절연체-금속 터널 다이오드
Authors
Heo, Su Jin
Advisor(s)
Jang, Jae Eun
Co-Advisor(s)
Cho, Chang Hee
Issue Date
2018
Available Date
2018-03-14
Degree Date
2018. 2
Type
Thesis
Keywords
MIM diodeMIIM diodeVertical Metal Cylinder Structurenon-linearityasymmetryMIM 다이오드MIIM 다이오드수직 금속 실린더 구조비선형성비대칭성
Abstract
Electrical characteristics of metal-insulator-metal (MIM) tunnel diodes with various materials and structural designs for high speed operation and rectification effects have been studied. Recently, high speed devices have been demanded in many fields such as high performance control process unit (CPU), optoelectric devices and communications. Among various electrical components for high speed working, in here, rectifying diodes have been studied as basic building block structure for the high-speed devices.Traditionally, PN junction diodes and Schottky diodes have been studied intensively for rectifying function. However, the mechanism of the pn junction diode is not suitable for high speed rectification due to the large depletion region width. For Schottky barrier diode, it is more suitable for high-speed switching. Since it has very short reverse recovery time. However, the driving frequency limit of Schottky diode is around 5THz. Therefore, new rectifying mechanism operating at a high frequency should be suggested. As one of the rectifying diode, MIM diode is operated by quantum electron tunneling effect which occurs when a particle passes through a thin potential barrier. So, MIM tunnel diode is enabled high-speed switching and it can have a low operating voltage. In order to increase the high-speed operation and rectification effect of MIM diode structure, the MIM diode should have a thin insulator layer as a tunneling barrier. Moreover, the current-voltage characteristics of the devices should have non-linearity and asymmetry. However, due to the tunneling mechanism of device structure, the non-linearity or asymmetry characteristics should be improved. Therefore, this paper was focused to improve the non-linearity and asymmetry characteristics of MIM diode. To improve the non-linearity and asymmetry characteristics of the diode, the various MIM diode structure were studied different work function of metal, double insulator layers and device design as important parameters. The simple flat MIM didoes, metal-insulator-insulator-metal (MIIM) diode, and vertical metal cylinder structure (VMCS) MIM diode have been studied. The simple flat MIM diode considering material effect together did not show high non-linearity and asymmetric characteristics. However, the flat MIIM diode has good non-linearity and some asymmetry in there I-V characteristics. Although VMCS MIM diode did not have a better non-linearity and asymmetry properties. However, the VMCS MIM diode shows the non-linearity and asymmetry characteristic more improved than simple flat MIM tunnel diode. Therefore, we could show the feasibility of high speed switching and rectification in MIM diode using the vertical metal cylinder structure which is applied the device design as a parameter. These new MIM diode structure can be applied to various field such as new electronic devices, rectifier antennas for energy harvesting, optical devices, infrared/terahertz detectors in high frequency range, and electric high-speed switching devices. ⓒ 2017 DGIST
Table Of Contents
Ⅰ. INTRODUCTION 1-- 1.1 Theoretical background 1-- 1.1.1 PN junction diode & Schottky barrier diode 1-- 1.1.2 Tunnel diode 3-- 1.1.2.1 Quantum tunneling effect 3-- 1.1.2.2 Tunnel diode (Esaki diode) 4-- 1.1.3.MIM tunnel diode 6-- 1.1.3.1 Conduction mechanism of MIM diode 8-- 1.1.3.2 Characteristics of MIM diode 10-- 1.1.3.3 Theoretical model of MIM diode 12-- 1.1.3.4 Structural tendency of MIM diode 14-- 1.2 Objective 16-- II. FABRICATION 17-- 2.1 Fabrication of simple flat MIM diode 17-- 2.2 Fabrication of flat MIIM diode 21-- 2.3 Fabrication of vertical metal cylinder structure MIM diode 24-- III. ELECTRIC CHARACTERISTICS AND RESULT 27-- 3.1 Electrical characteristics of simple flat MIM diode 27-- 3.2 Electrical characteristics of flat MIIM diode 33-- 3.3 Electrical characteristics of vertical metal cylinder structure MIM diode 40-- IV. CONCLUSION 49-- REFERENCE 51
URI
http://dgist.dcollection.net/common/orgView/200000004635
http://hdl.handle.net/20.500.11750/6028
DOI
10.22677/thesis.200000004635
Degree
Master
Department
Information and Communication Engineering
University
DGIST
Related Researcher
  • Author Jang, Jae Eun Advanced Electronic Devices Research Group(AEDRG)
  • Research Interests Nanoelectroinc device; 생체 신호 센싱 시스템 및 생체 모방 디바이스; 나노 통신 디바이스
Files:
Collection:
Department of Information and Communication EngineeringThesesMaster


qrcode mendeley

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE