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dc.contributor.author 최기순 -
dc.contributor.author 장재은 -
dc.contributor.author 허수진 -
dc.contributor.author 장현우 -
dc.contributor.author 김소희 -
dc.date.accessioned 2026-09-01T02:10:20Z -
dc.date.available 2026-09-01T02:10:20Z -
dc.identifier.uri https://scholar.dgist.ac.kr/handle/20.500.11750/60692 -
dc.description.abstract A method of manufacturing a vacuum tunneling device, the method including forming a tunnelling device on a substrate; forming an insulating interlayer on the substrate such that the insulating interlayer has an opening exposing the tunneling device; and performing a gradient deposition process in a vacuum chamber to form a sealing layer on the insulating interlayer such that the sealing layer fills an upper portion of the opening. -
dc.title 진공 터널링 소자 및 그 제조 방법 -
dc.title.alternative VACUUM TUNNELING DEVICE AND METHOD OF MANUFACTURING THE SAME -
dc.type Patent -
dc.publisher.country US -
dc.identifier.patentApplicationNumber 17-829469 -
dc.date.application 2022-06-01 -
dc.identifier.patentRegistrationNumber US12716124 -
dc.date.registration 2026-08-25 -
dc.contributor.assignee (재)대구경북과학기술원(50/0),(주)삼성전자(50/100) -
dc.type.iprs 특허 -
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장재은
Jang, Jae Eun장재은

Department of Electrical Engineering and Computer Science

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