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진공 터널링 소자 및 그 제조 방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최기순 | - |
| dc.contributor.author | 장재은 | - |
| dc.contributor.author | 허수진 | - |
| dc.contributor.author | 장현우 | - |
| dc.contributor.author | 김소희 | - |
| dc.date.accessioned | 2026-09-01T02:10:20Z | - |
| dc.date.available | 2026-09-01T02:10:20Z | - |
| dc.identifier.uri | https://scholar.dgist.ac.kr/handle/20.500.11750/60692 | - |
| dc.description.abstract | A method of manufacturing a vacuum tunneling device, the method including forming a tunnelling device on a substrate; forming an insulating interlayer on the substrate such that the insulating interlayer has an opening exposing the tunneling device; and performing a gradient deposition process in a vacuum chamber to form a sealing layer on the insulating interlayer such that the sealing layer fills an upper portion of the opening. | - |
| dc.title | 진공 터널링 소자 및 그 제조 방법 | - |
| dc.title.alternative | VACUUM TUNNELING DEVICE AND METHOD OF MANUFACTURING THE SAME | - |
| dc.type | Patent | - |
| dc.publisher.country | US | - |
| dc.identifier.patentApplicationNumber | 17-829469 | - |
| dc.date.application | 2022-06-01 | - |
| dc.identifier.patentRegistrationNumber | US12716124 | - |
| dc.date.registration | 2026-08-25 | - |
| dc.contributor.assignee | (재)대구경북과학기술원(50/0),(주)삼성전자(50/100) | - |
| dc.type.iprs | 특허 | - |
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Related Researcher
- Jang, Jae Eun장재은
-
Department of Electrical Engineering and Computer Science
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