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Pyrimidine based hole-blocking materials with high triplet energy and glass transition temperature for blue phosphorescent OLEDs
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- Title
- Pyrimidine based hole-blocking materials with high triplet energy and glass transition temperature for blue phosphorescent OLEDs
- DGIST Authors
- Jang, Seok Hoon ; Han, S.H. ; Lee, J.Y. ; Lee, Youngu
- Issued Date
- 2018-05
- Citation
- Jang, Seok Hoon. (2018-05). Pyrimidine based hole-blocking materials with high triplet energy and glass transition temperature for blue phosphorescent OLEDs. doi: 10.1016/j.synthmet.2018.03.002
- Type
- Article
- Article Type
- Article
- Author Keywords
- Hole blocking ; Triplet energy ; Glass transition temperature ; OLED ; Phosphorescence
- Keywords
- LIGHT-EMITTING-DIODES ; ELECTRON-TRANSPORT MATERIALS ; STRUCTURE-PROPERTY RELATIONSHIP ; HIGH-EFFICIENCY ; OPERATING VOLTAGE ; ROLL-OFF ; GREEN ; STABILITY ; RED
- ISSN
- 0379-6779
- Abstract
-
We designed and synthesized new hole-blocking materials (HBMs), mPyrPPB and pPPyrPB, consisting of pyrimidine and phenylene segments for high-performance blue phosphorescent OLEDs. The thermal, electrochemical, and optical properties of mPyrPPB and pPPyrPB were systemically investigated. It was found that the Tg values of mPyrPPB and pPPyrPB were 118 and 137 °C, respectively. Especially, the triplet energy and highest occupied molecular orbital (HOMO) energy level of mPyrPPB were 2.77 eV and −6.86 eV, respectively, indicating that it had sufficiently high triplet energy and deep HOMO energy level for the hole-blocking layer (HBL) in blue phosphorescent OLED devices. It was found that all the meta conjugation of mPyrPPB molecular structure effectively prevented π-electron delocalization and thus increased the triplet energy and electron transport property. In addition, mPyrPPB exhibited higher electron-transporting property than pPPyrPB because mPyrPPB possessed effective intermolecular hydrogen bonds. When mPyrPPB was utilized as a HBM for a blue phosphorescent OLED device, external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) values effectively increased to 16.4%, 36.7 cd/A, and 13.4 lm/W, respectively. Compared to the reference device without HBM, EQE, CE, and PE increased by 38%, 35%, and 54% respectively, mainly due to the confinement of triplet excitons and holes and improved electron-transporting ability. © 2018 Elsevier B.V.
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- Publisher
- Elsevier BV
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