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Issue Date	Title Author(s) Journal	View
2018-05	Effect of NiFeCr seed and capping layers on exchange bias and planar Hall voltage response of NiFe/Au/IrMn trilayer structures Talantsev, Artem ; Aly, Amir Ibrahim Elzawawy ; Kim, CheolGi American Institute of Physics Inc., 2018-05	648
2019-07	Equisensitive adjustment of planar Hall effect sensor's operating field range by material and thickness variation of active layers Aly, Amir Ibrahim Elzawawy ; Kim, SungJoon ; Talantsev, Artem ; Kim, CheolGi Institute of Physics Publishing, 2019-07	628
2022-05	Advances and key technologies in magnetoresistive sensors with high thermal stabilities and low field detectivities Lim, Byeonghwa ; Mahfoud, Mohamed ; Das, Proloy T. ; Jeon, Taehyeong ; Jeon, Changyeop ; Kim, Mijin ; Nguyen, Trung-Kien ; Tran, Quang-Hung ; Terki, Ferial ; Kim, CheolGi APL Materials, v.10, no.5, 2022-05	155

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