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Improved distribution of resistance switching through localized Ti-doped NiO layer with InZnOx/CuOx oxide diode

Title
Improved distribution of resistance switching through localized Ti-doped NiO layer with InZnOx/CuOx oxide diode
Authors
Song, Min HoLee, HyunKiSeo, David HyungseokLee, Hyeon-JunKim, June-SeoCho, Hui-SupLyu, Hong-KunSeo, Sun AeLee, Myoung-Jae
DGIST Authors
Song, Min Ho; Lee, HyunKi; Seo, David Hyungseok; Lee, Hyeon-JunKim, June-Seo; Cho, Hui-Sup; Lyu, Hong-Kun; Seo, Sun Ae; Lee, Myoung-Jae
Issue Date
2018-08
Citation
IEEE Journal of the Electron Devices Society, 6(1), 905-909
Type
Article
Article Type
Article
Author Keywords
Ti-doped NiOresistance switchingoxide diodenonvolatile memory
Keywords
MEMORYENDURANCE
ISSN
2168-6734
Abstract
Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = 3.2× 10-5Ω, standard deviation = 1.3×10-6) and high (average = 2.8×10-6Ω, standard deviation = 6.7×10-7) resistance states. OAPA
URI
http://hdl.handle.net/20.500.11750/9242
DOI
10.1109/JEDS.2018.2864180
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
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Collection:
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