Improved distribution of resistance switching through localized Ti-doped NiO layer with InZnOx/CuOx oxide diode

Abstract

Asymmetric sized single oxide diode (InZnOx/CuOx) with single resistor (Ti-doped NiO) device (1D-1R) was integrated into a crossbar array at room temperature to provide high current through the diode while keeping resistance switching localized in a small area. The Ti (0.1 wt %) doped NiO layer was fabricated inside an inverted cone-structure to localize switching and improve general device performance. We were able observe resistance switching up to around 100 cycles in the 1D-1R structure. In addition, the addition of the diode to the structure acted as an external resistance suppressing overflow current during Ti-doped NiO switching from a high resistance state to a low resistance state, thus improving switching distribution in both low (average = 3.2× 10-5Ω, standard deviation = 1.3×10-6) and high (average = 2.8×10-6Ω, standard deviation = 6.7×10-7) resistance states. OAPA