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Densification Control as a Method of Improving the Ambient Stability of Sol-Gel-Processed SnO2 Thin-Film Transistors

Title
Densification Control as a Method of Improving the Ambient Stability of Sol-Gel-Processed SnO2 Thin-Film Transistors
Authors
Lee, Won-YongHa, Seung HyunLee, HyunjaeBae, Jin-HyukJang, BonghoKwon, Hyuk-JunJang, Jaewon
DGIST Authors
Kwon, Hyuk-Jun
Issue Date
2019-06
Citation
IEEE Electron Device Letters, 40(6), 905-908
Type
Article
Article Type
Article
Author Keywords
Sol-gelSnO2thin film transistorsambient stabilitydensification
Keywords
DensificationDeteriorationElectric field effectsPassivationSol-gel processStabilityThin film circuitsThin filmsActive channel layersAmbient stabilityElectrical stabilityEnvironmental stabilityField-effect mobilitiesN-type semiconductorsPerformance deteriorationThin-film transistor (TFTs)Thin film transistors
ISSN
0741-3106
Abstract
We use sol-gel-processed SnO to fabricate thin-film transistors (TFTs) with good ambient stability, showing that SnO film densification can be effectively controlled by a choice of proper drying temperatures. In particular, TFTs comprising SnO2 films dried at 150 °C show conventional n-type semiconductor properties, high-saturation-regime field-effect mobility (7.3 cm Vs), good on/off current ratio, excellent sub-threshold swing values, and good electrical stability after 30-day exposure to ambient air, which alleviates the need for additional passivation layers to protect the active channel layer. Conversely, TFTs comprising SnO2 films dried at 50 or 100 °C show poor environmental stability due to low densification. Specifically, less dense films are characterized by the presence of loosely packed structures and small contact areas between crystallites, which promote the adsorption of gas molecules from the surroundings and result in significant TFT performance deterioration. © 1980-2012 IEEE.
URI
http://hdl.handle.net/20.500.11750/9990
DOI
10.1109/LED.2019.2910286
Publisher
Institute of Electrical and Electronics Engineers
Related Researcher
  • Author Kwon, Hyuk-Jun Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab.
  • Research Interests
Files:
There are no files associated with this item.
Collection:
Department of Information and Communication EngineeringAdvanced Electronic Devices Research Group(AEDRG) - Kwon Lab.1. Journal Articles


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