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Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts

Title
Low-cost and nontoxic highly rectifying diodes using p-type tin monosulfide (SnS) thin films and Ti/Au binary contacts
Authors
Nandanapalli, Koteeswara ReddyMudusu, DevikaReddy, Gunasekhar K.
Issue Date
2019-09
Citation
Materials Science in Semiconductor Processing, 100, 192-199
Type
Article
Article Type
Article
Author Keywords
Absorber materialsSnS filmsLow-resistive contactsMetallizationHeterojunction devices
Keywords
ATOMIC LAYER DEPOSITIONELECTRICAL-PROPERTIESSUBSTRATESURFACEGROWTHELECTRODEPOSITIONHETEROSTRUCTUREFABRICATIONMONOLAYERMECHANISM
ISSN
1369-8001
Abstract
Eco-friendly and efficient rectifying p-n diodes have been developed by using cost-effective and non-toxic fin monosulfide (SnS) thin films. Chemically stoichiometric fin monosulfide (SnS) thin films followed by titanium/gold (Ti/Au) bilayer contacts were deposited on Si substrates and then, the structures were treated by rapid thermal annealing process (RTP) at different temperatures. The impact of RTP treatment on the surface morphology and chemical composition of Ti/Au contacts and SnS films along with their electrical characteristics were investigated. The electrical measurements show that as compared to untreated Si/SnS/Ti/Au structures, the heat-treated structures typically at 200 degrees C possess low electrical resistivity and contact resistance of similar to 3 x 10(-2) Omega cm and similar to 11 k Omega, respectively. Heterojunction formed between p-SnS and n-Si exhibited excellent diode characteristics and possess a high current flow in the order of milliamperes, and excellent rectification factor of 1177@ 5 V.
URI
http://hdl.handle.net/20.500.11750/9993
DOI
10.1016/j.mssp.2019.05.001
Publisher
Pergamon Press
Files:
There are no files associated with this item.
Collection:
ETC1. Journal Articles


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