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Showing results 1 to 3 of 3

Issue Date	Title Author(s) Journal	View
2019-09	Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process Baik, Seunghun ; Kwon, Hyeokjin ; Paeng, Chuck ; Zhang, He ; Kalkofen, Bodo ; Jang, Jae Eun ; Kim, Y. S. ; Kwon, Hyuk-Jun IEEE Electron Device Letters, v.40, no.9, pp.1507 - 1510, 2019-09	512
2020-09	Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method Baik, Seunghun ; Kwon, Dong-Jae ; Kang, Hongki ; Jang, Jae Eun ; Jang, Jaewon ; Kim, Y. S. ; Kwon, Hyuk-Jun IEEE Access, v.8, pp.172166 - 172174, 2020-09	474
2022-08	High and Uniform Phosphorus Doping in Germanium through a Modified Plasma Assisted Delta Doping Process with H2 Plasma Treatment Jeong, Heejae ; Kim, Y. S. ; Baik, Seunghun ; Kang, Hongki ; Jang, Jae Eun ; Kwon, Hyuk-Jun IEEE Electron Device Letters, v.43, no.8, pp.1315 - 1318, 2022-08	308

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