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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

  • Jo, Hyunjin
  • Choi, Jeong-Hun
  • Hyun, Cheol-Min
  • Seo, Seung-Young
  • Kim, Da Young
  • Kim, Chang-Min
  • Lee, Myoung Jae
  • Kwon, Jung-Dae
  • Moon, Hyoung-Seok
  • Kwon, Se-Hun
  • et al
  • 2017-10
  • Jo, Hyunjin. (2017-10). A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels. Scientific Reports, 7(1). doi: 10.1038/s41598-017-14649-6
  • Nature Publishing Group
  • View : 861
  • Download : 158
  • Choi, Jeong-Hun
  • Ha, Min-Ji
  • Park, Jae Chan
  • Park, Tae Joo
  • Kim, Woo-Hee
  • Lee, Myoung-Jae
  • Ahn, Ji-Hoon
  • 2022-02
  • Choi, Jeong-Hun. (2022-02). A Strategy for Wafer-Scale Crystalline MoS2 Thin Films with Controlled Morphology Using Pulsed Metal-Organic Chemical Vapor Deposition at Low Temperature. Advanced Materials Interfaces, 9(4), 2101785. doi: 10.1002/admi.202101785
  • John Wiley and Sons Ltd
  • View : 714
  • Download : 0
  • 2017-07
  • Hyun, Cheol-Min. (2017-07). Photo-thermoelectric properties of SnS nanocrystals with orthorhombic layered structure. Applied Physics Letters, 111(1), 013104. doi: 10.1063/1.4992115
  • American Institute of Physics Inc.
  • View : 631
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  • Hyun, Cheol-Min
  • Choi, Jeong-Hun
  • Lee, Seung Won
  • Park, Jeong Hwa
  • Lee, Kang-Taek
  • Ahn, Ji-Hoon
  • 2018-10
  • Hyun, Cheol-Min. (2018-10). Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders. Journal of Alloys and Compounds, 765, 380–384. doi: 10.1016/j.jallcom.2018.06.183
  • Elsevier Ltd
  • View : 1007
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  • Hyun, Cheol-Min
  • Choi, Jeong-Hun
  • Lee, Seung Won
  • Seo, Seung-Young
  • Lee, Myoung-Jae
  • Kwon, Se-Hun
  • Ahn, Ji-Hoon
  • 2019-04
  • Hyun, Cheol-Min. (2019-04). Synthesis of Bi2Te3 Single Crystals with Lateral Size up to Tens of Micrometers by Vapor Transport and Its Potential for Thermoelectric Applications. doi: 10.1021/acs.cgd.8b01931
  • American Chemical Society
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