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Showing results 1 to 4 of 4

Article
Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
  • 2011-08
  • Son, Dae-Ho. (2011-08). Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors. Thin Solid Films, 519(20), 6815–6819. doi: 10.1016/j.tsf.2011.04.079
  • Elsevier
  • View : 810
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Article
Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering
  • Kong, Bo Hyun ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun
  • 2010-06
  • Kong, Bo Hyun. (2010-06). Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering. Applied Surface Science, 256(16), 4972–4976. doi: 10.1016/j.apsusc.2010.03.011
  • Elsevier B.V.
  • View : 1042
  • Download : 0
Article
Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering
  • Kong, Bo Hyun ; 
  • Han, Won Suk ; 
  • Kim, Young Yi ; 
  • Cho, Hyung Koun ; 
  • Kim, Jae Hyun
  • 2010-06
  • Kong, Bo Hyun. (2010-06). Heterojunction light emitting diodes fabricated with different n-layer oxide structures on p-GaN layers by magnetron sputtering. Applied Surface Science, 256(16), 4972–4976. doi: 10.1016/j.apsusc.2010.03.011
  • Elsevier B.V.
  • View : 363
  • Download : 0
Article
High performance and the low voltage operating InGaZnO thin film transistor
  • 2010-11
  • Son, Dae-ho. (2010-11). High performance and the low voltage operating InGaZnO thin film transistor. Current Applied Physics, 10(4), E157–E160. doi: 10.1016/j.cap.2010.03.012
  • Elsevier B.V.
  • View : 942
  • Download : 0
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