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High performance and the low voltage operating InGaZnO thin film transistor
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- Title
- High performance and the low voltage operating InGaZnO thin film transistor
- Issued Date
- 2010-11
- Citation
- Son, Dae-ho. (2010-11). High performance and the low voltage operating InGaZnO thin film transistor. Current Applied Physics, 10(4), E157–E160. doi: 10.1016/j.cap.2010.03.012
- Type
- Article
- Author Keywords
- Thin film transistor ; Metal oxide ; High-k material ; HfO2 ; Low voltage operating device
- Keywords
- DISPLAY ; Electric Properties ; Electrical Property ; Field-Effect Mobilities ; Gate Dielectrics ; Gates (Transistor) ; Hafnium ; Hafnium Oxides ; HFO2 ; High-K Material ; High-K Materials ; High Field ; Low Voltage Operating Device ; Low Voltages ; Metal Oxide ; Metallic Compounds ; OXIDE SemICONDUCTOR ; RF-Sputtering ; Room Temperature ; Silicon Compounds ; Subthreshold Swing ; Thin Film Transistor ; Thin Film Transistors ; Thin Films ; Threshold Voltage ; TRANSPARENT ; Vapor Deposition ; ZnO
- ISSN
- 1567-1739
- Abstract
-
In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively. © 2010 Elsevier B.V. All rights reserved.
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- Publisher
- Elsevier B.V.
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