High performance and the low voltage operating InGaZnO thin film transistor

Abstract

In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively. © 2010 Elsevier B.V. All rights reserved.