Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ansari, Mohd Zahid | ko |
dc.contributor.author | Parveen, Nazish | ko |
dc.contributor.author | Nandi, Dip K. | ko |
dc.contributor.author | Ramesh, Rahul | ko |
dc.contributor.author | Ansari, Sajid Ali | ko |
dc.contributor.author | Cheon, Taehoon | ko |
dc.contributor.author | Kim, Soo-Hyun | ko |
dc.date.accessioned | 2019-08-13T10:48:00Z | - |
dc.date.available | 2019-08-13T10:48:00Z | - |
dc.date.created | 2019-08-01 | - |
dc.date.issued | 2019-07 | - |
dc.identifier.citation | Scientific Reports, v.9, no.1, pp.10225 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11750/10373 | - |
dc.description.abstract | Layered Sn-based chalcogenides and heterostructures are widely used in batteries and photocatalysis, but its utilizations in a supercapacitor is limited by its structural instability and low conductivity. Here, SnSx thin films are directly and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by atomic layer deposition (ALD), using tetrakis(dimethylamino) tin [TDMASn, ((CH3)(2)N)(4)Sn] and H2S that serves as an electrode for supercapacitor without any additional treatment. Two kinds of ALD-SnSx films grown at 160 degrees C and 180 degrees C are investigated systematically by X-ray diffractometry, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy (TEM). All of the characterization results indicate that the films deposited at 160 degrees C and 180 degrees C predominantly consist of hexagonal structured-SnS2 and orthorhombic-SnS phases, respectively. Moreover, the highresolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline hexagonal-SnS2 layered structure for the films grown at 160 degrees C. The double layer capacitance with the composite electrode of SnSx@ NF grown at 160 degrees C is higher than that of SnSx@ NF at 180 degrees C, while pseudocapacitive Faradaic reactions are evident for both SnSx@ NF electrodes. The superior performance as an electrode is directly linked to the layered structure of SnS2. Further, the optimal thickness of ALD-SnSx thin film is found to be 60 nm for the composite electrode of SnSx@ NF grown at 160 degrees C by controlling the number of ALD cycles. The optimized SnSx@ NF electrode delivers an areal capacitance of 805.5 mF/cm(2) at a current density of 0.5 mA/cm(2) and excellent cyclic stability over 5000 charge/discharge cycles. | - |
dc.language | English | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/s41598-019-46679-7 | - |
dc.identifier.wosid | 000475467800068 | - |
dc.identifier.scopusid | 2-s2.0-85069941651 | - |
dc.type.local | Article(Overseas) | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.contributor.nonIdAuthor | Ansari, Mohd Zahid | - |
dc.contributor.nonIdAuthor | Parveen, Nazish | - |
dc.contributor.nonIdAuthor | Nandi, Dip K. | - |
dc.contributor.nonIdAuthor | Ramesh, Rahul | - |
dc.contributor.nonIdAuthor | Ansari, Sajid Ali | - |
dc.contributor.nonIdAuthor | Kim, Soo-Hyun | - |
dc.identifier.citationVolume | 9 | - |
dc.identifier.citationNumber | 1 | - |
dc.identifier.citationStartPage | 10225 | - |
dc.identifier.citationTitle | Scientific Reports | - |
dc.type.journalArticle | Article | - |
dc.description.isOpenAccess | Y | - |
dc.subject.keywordPlus | PHYSICAL-PROPERTIES | - |
dc.subject.keywordPlus | ENERGY-STORAGE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | COMPOSITE | - |
dc.subject.keywordPlus | BATTERIES | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordPlus | NITRIDE | - |