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Issue Date Title Author(s) Journal View
2023-11

Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation

Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation

Baik, Seunghun ;  Jeong, Heejae ;  Park, Geuntae ;  Kang, Hongki ;  Jang, Jae Eun ;  Kwon, Hyuk-Jun

Applied Surface Science, v.638, 2023-11

 258
2019-09
Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process

Baik, Seunghun ;  Kwon, Hyeokjin ;  Paeng, Chuck ;  Zhang, He ;  Kalkofen, Bodo ;  Jang, Jae Eun ;  Kim, Y. S. ;  Kwon, Hyuk-Jun

IEEE Electron Device Letters, v.40, no.9, pp.1507 - 1510, 2019-09

 530
2020-09

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method

Baik, Seunghun ;  Kwon, Dong-Jae ;  Kang, Hongki ;  Jang, Jae Eun ;  Jang, Jaewon ;  Kim, Y. S. ;  Kwon, Hyuk-Jun

IEEE Access, v.8, pp.172166 - 172174, 2020-09

 502
2024-07
Low-Temperature Nanosecond Laser Process of HZO-IGZO FeFETs toward Monolithic 3D System on Chip Integration

Kim, Dongsu ;  Jeong, Heejae ;  Pyo, Goeun ;  Heo, Su Jin ;  Baik, Seunghun ;  Kim, Seonhyoung ;  Choi, Hong Soo ;  Kwon, Hyuk-Jun ;  Jang, Jae Eun

Advanced Science, v.11, no.28, 2024-07

 74
2019-02

Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts

Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts

Kwon, Hyeokjin ;  Baik, Seunghun ;  Jang, Jae Eun ;  Jang, Jaewon ;  Kim, Sunkook ;  Grigoropoulos, Costas P. ;  Kwon, Hyuk Jun

Electronics, v.8, no.2, 2019-02

 570
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