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Issue Date	Title Author(s) Journal	View
2019-09	Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process Baik, Seunghun ; Kwon, Hyeokjin ; Paeng, Chuck ; Zhang, He ; Kalkofen, Bodo ; Jang, Jae Eun ; Kim, Y. S. ; Kwon, Hyuk-Jun IEEE Electron Device Letters, v.40, no.9, pp.1507 - 1510, 2019-09	512
2020-09	Conformal and Ultra Shallow Junction Formation Achieved Using a Pulsed-Laser Annealing Process Integrated With a Modified Plasma Assisted Doping Method Baik, Seunghun ; Kwon, Dong-Jae ; Kang, Hongki ; Jang, Jae Eun ; Jang, Jaewon ; Kim, Y. S. ; Kwon, Hyuk-Jun IEEE Access, v.8, pp.172166 - 172174, 2020-09	474
2023-11	Reducing Specific Contact Resistivity for n-type Germanium using Laser Activation Process and Nano-island Formation Baik, Seunghun ; Jeong, Heejae ; Park, Geuntae ; Kang, Hongki ; Jang, Jae Eun ; Kwon, Hyuk-Jun Applied Surface Science, v.638, 2023-11	213
2023-01	Low-temperature laser crystallization of Ge layers grown on MgO substrates Baek, Jongyeon ; Kim, Seung-Hwan ; Jeong, Heejae ; Nguyen, Manh-Cuong ; Baek, Daeyoon ; Baik, Seunghun ; Nguyen, An Hoang-Thuy ; Baek, Jong-Hwa ; Kim, Hyung-jun ; Kwon, Hyuk-Jun ; Choi, Rino Applied Surface Science, v.609, 2023-01	280

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