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Issue Date	Title Author(s) Journal	View
2019-09	Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process Baik, Seunghun ; Kwon, Hyeokjin ; Paeng, Chuck ; Zhang, He ; Kalkofen, Bodo ; Jang, Jae Eun ; Kim, Y. S. ; Kwon, Hyuk-Jun IEEE Electron Device Letters, v.40, no.9, pp.1507 - 1510, 2019-09	531
2018-04	Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells Cho, Yuljae ; Hou, Bo ; Lim, Jongchul ; Lee, Sanghyo ; Pak, Sangyeon ; Hong, John ; Giraud, Paul ; Jang, A Rang ; Lee, Young Woo ; Lee, Juwon ; et al American Chemical Society, 2018-04	624
2024-05	Heavily phosphorus doped germanium with local strain compensation effect by Co-implantation and rapid thermal process Baik, Seunghun ; Jeong, Heejae ; Park, Geuntae ; Kang, Hongki ; Jang, Jae Eun ; Kwon, Hyuk-Jun Journal of Alloys and Compounds, v.984, 2024-05	8

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