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PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications

Title
PZT Ferroelectric Synapse TFT With Multi-Level of Conductance State for Neuromorphic Applications
Author(s)
Kim, DongsuHeo, Su JinPyo, GoeunChoi, HongsooKwon, Hyuk-JunJang, Jae Eun
DGIST Authors
Kim, DongsuHeo, Su JinPyo, GoeunChoi, HongsooKwon, Hyuk-JunJang, Jae Eun
Issued Date
2021-10
Type
Article
Author Keywords
Ferroelectricsynapseneuromorphicmulti-leveltransistor
Keywords
Semiconducting indium compoundsTemperature measurementThin film circuitsThin filmsZinc oxideC. thin film transistor (TFT)Conductance stateFerroelectricMultilevelsNeumannNeuromorphicPerformances evaluationSynapseThin film transistorsAnnealingFerroelectricityGallium compoundsII-VI semiconductors
ISSN
2169-3536
Abstract
To fundamentally solve the bottleneck of Von Neumann’s computing architecture, a neuromorphic thin-film transistor (NTFT) employing Pb(Zr, Ti)O3 (PZT) was investigated. The indium gallium zinc oxide (IGZO) channel back gate TFT structure was chosen to solve the diffusion of atoms that form a channel layer during the annealing process for crystallization of PZT. A post-deposition process with IGZO after annealing PZT and using an oxide-based material as a channel structure can minimize the diffusion phenomenon of junction materials and oxygen together, which leads to a high and reliable performance of the NTFT. The basic operations of synapses short-term memory (STM) and long-term memory (LTM) were also analyzed to confirm the application of a neuromorphic device. The high dielectric constant and polarization properties of Pb(Zr, Ti)O3 (PZT) allow the power consumption of spike signals used in spike dependent plasticity change to be reduced to 10 pJ. Moreover, a wide dynamic range of Gmax / Gmin ≅ 1000 was obtained, and the channel conductance was maintained over 40000 seconds. The optimized pulse achieved multi-level states (>32), which made the learning process efficient. This study verified that the PZT-TFT structure has a high potential and merits for neuromorphic devices.
URI
http://hdl.handle.net/20.500.11750/15749
DOI
10.1109/ACCESS.2021.3119607
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • 최홍수 Choi, Hongsoo 로봇및기계전자공학과
  • Research Interests Micro/Nano robot; Neural prostheses; MEMS; BMI; MEMS/NEMS; BioMEMS; MEMS 초음파 트랜스듀스; 인공와우
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Appears in Collections:
Department of Electrical Engineering and Computer Science Advanced Electronic Devices Research Group(AEDRG) - Kwon Lab. 1. Journal Articles
Department of Electrical Engineering and Computer Science Advanced Electronic Devices Research Group(AEDRG) - Jang Lab. 1. Journal Articles
Department of Robotics and Mechatronics Engineering Bio-Micro Robotics Lab 1. Journal Articles

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