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Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics
- Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics
- Abbas, Kaleem; Hwang, Jaeseok; Bae, Garam; Choi, Hongsoo; Kang, Dae Joon
- DGIST Authors
- Choi, Hongsoo
- Issue Date
- ACS Applied Materials and Interfaces, 9(15), 13571-13576
- Article Type
- Carrier Concentration; Dielectric Materials; Driven; Effect Transistors; Electric Field; Electric Field Effects; Electric Fields; Electrostatic Devices; Electrostatic Effect; Field Effect Transistors; Hybrid Dielectric; Hybrid Dielectrics; Insulator Metal Transition; Insulator Metal Transition; Interface Quality; Interfaces (Materials); Metal Insulator Transition; Metal Insulator Transition; Mott Transistor; Mott Transition; Nanobeams; Oxide Interface; Phase Transition; Positive Gate Bias; Power Field Effect Transistors; Quality Control; Resistance Modulation; Resistance Switching; Temperature; Thin Films; Vanadium; Vanadium Dioxide; Vanadium Dioxide; VO2
- We investigate the effect of electric field on VO2 back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102 in VO2 at a positive gate bias of 80 V (1.6 MV/cm). VO2 FET devices are prepared on SiO2 substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al2O3/SiO2 (500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO2 devices, decreasing the resistance and the transition temperature from 66.75 to 64 °C. The leakage analysis shows that the interface quality of VO2 films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO2 in an electric field. © 2017 American Chemical Society.
- American Chemical Society
- Related Researcher
Choi, Hong Soo
Bio-Micro Robotics Lab
Micro/Nano robot; Neural prostheses; MEMS; BMI; MEMS/NEMS; BioMEMS; MEMS 초음파 트랜스듀스; 인공와우
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- Department of Robotics EngineeringBio-Micro Robotics Lab1. Journal Articles
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