Next generation High-Mobility 2D chalcogenides TFT for display backplane

Abstract

The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption. Current state-of-the-art backplane technologies based on amorphous Si, poly Si, and IGZO, face challenges in meeting the requirements of next-generation displays, including larger dimensions, higher refresh rates, increased pixel density, greater brightness, and reduced power consumption. In this context, 2D chalcogenides have emerged as promising candidates for thin-film transistors (TFTs) in display backplanes, offering advantages such as high mobility, low leakage current, mechanical robustness, and transparency. This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes. We delve into the structural characteristics, electronic properties, and synthesis methods of 2D chalcogenides, emphasizing scalable growth strategies that are relevant to large-area display backplanes. Additionally, we discuss mechanical flexibility and strain engineering, crucial for the development of flexible displays. Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization, while considering scaling over a large area. Active-matrix implementation of 2D TFTs in various applications is also explored, benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes. Furthermore, the latest development on the integration of 2D chalcogenide TFTs with different display technologies, such as OLED, quantum dot, and MicroLED displays. © 2025 The Author(s). Published by IOP Publishing Ltd on behalf of the IMMT.