Ultra-Short Pulsed Laser Annealing Effects on MoS2 Transistors with Asymmetric and Symmetric Contacts

Abstract

The ultra-short pulsed laser annealing process enhances the performance of MoS 2 thin film transistors (TFTs) without thermal damage on plastic substrates. However, there has been insufficient investigation into how much improvement can be brought about by the laser process. In this paper, we observed how the parameters of TFTs, i.e., mobility, subthreshold swing, I on /I off ratio, and V th , changed as the TFTs’ contacts were (1) not annealed, (2) annealed on one side, or (3) annealed on both sides. The results showed that the linear effective mobility (µeff_lin) increased from 13.14 [cm 2 /Vs] (not annealed) to 18.84 (one side annealed) to 24.91 (both sides annealed). Also, I on /I off ratio increased from 2.27 x 10 5 (not annealed) to 3.14 x 10 5 (one side annealed) to 4.81 x 10 5 (both sides annealed), with V th shifting to negative direction. Analyzing the main reason for the improvement through the Y function method (YFM), we found that both the contact resistance (R c ) and the channel interface resistance (R ch ) improves after the pulsed laser annealings under different conditions. Moreover, the Rc enhances more dramatically than the R ch does. In conclusion, our picosecond laser annealing improves the performance of TFTs (especially, the R c ) in direct proportion to the number of annealings applied. The results will contribute to the investigation about correlations between the laser annealing process and the performance of devices. © 2019 by the authors. Licensee MDPI, Basel, Switzerland.