Showing results 1 to 5 of 5
- 2020-06
- Lee, Hyeon-Jun. (2020-06). A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits. IEEE Electron Device Letters, 41(6), 896–899. doi: 10.1109/led.2020.2986478
- Institute of Electrical and Electronics Engineers
- View : 547
- Download : 0
- 2019-08
- Lee, Hyeon-Jun. (2019-08). Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor. Scientific Reports, 9(1), 11977. doi: 10.1038/s41598-019-48552-z
- Nature Publishing Group
- View : 809
- Download : 301
- 2018-12
- Lee, Hyeon-Jun. (2018-12). Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States. IEEE Journal of the Electron Devices Society, 6(1), 830–834. doi: 10.1109/JEDS.2018.2855731
- Institute of Electrical and Electronics Engineers Inc.
- View : 573
- Download : 49
- 2017-12
- Lee, Hyeon-Jun. (2017-12). Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor. doi: 10.1038/s41598-017-18420-9
- Nature Publishing Group
- View : 879
- Download : 125
- 2017-08
- Lee, Hyeon-Jun. (2017-08). Impact of transient currents caused by alternating drain stress in oxide semiconductors. Scientific Reports, 7(1), 9782–9790. doi: 10.1038/s41598-017-10285-2
- Nature Publishing Group
- View : 884
- Download : 127
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