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Showing results 1 to 5 of 5

Issue Date	Title Author(s) Journal	View
2020-06	A Study on the Effect of Pulse Rising and Falling Time on Amorphous Oxide Semiconductor Transistors in Driver Circuits Lee, Hyeon-Jun ; Abe, Katsumi IEEE Electron Device Letters, v.41, no.6, pp.896 - 899, 2020-06	514
2019-08	Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor Lee, Hyeon-Jun ; Abe, Katsumi ; Noh, Hee Yeon ; Kim, June-Seo ; Lee, Hyunki ; Lee, Myoung-Jae Scientific Reports, v.9, no.1, pp.11977, 2019-08	767
2018-12	Drain-Induced Barrier Lowering in Oxide Semiconductor Thin-Film Transistors With Asymmetrical Local Density of States Lee, Hyeon-Jun ; Abe, Katsumi ; Cho, Sung Haeng ; Kim, June Seo ; Bang, Seokhwan ; Lee, Myoung Jae Institute of Electrical and Electronics Engineers Inc., 2018-12	543
2017-12	Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor Lee, Hyeon-Jun ; Abe, Katsumi ; Kim, June-Seo ; Lee, Myoung Jae Nature Publishing Group, 2017-12	721
2017-08	Impact of transient currents caused by alternating drain stress in oxide semiconductors Lee, Hyeon-Jun ; Cho, Sung Haeng ; Abe, Katsumi ; Lee, Myoung-Jae ; Jung, Minkyung Scientific Reports, v.7, no.1, pp.9782 - 9790, 2017-08	714

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