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Showing results 7 to 11 of 11

Issue Date	Title Author(s) Journal	View
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	636
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	27
2015-10	Red photoluminescence and blue-shift caused by phase transformation in multilayer films of titanium dioxide and zinc sulfide Choi, Byeongdae ; Shim, Hyunseok ; Allabergenov, Bunyod Optical Materials Express, v.5, no.10, pp.2156 - 2163, 2015-10	580
2015-11	Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment Kim, Joonwoo ; Jeong, Soon Moon ; Jeong, Jaewook Japanese Journal of Applied Physics, v.54, no.11, 2015-11	682
2015-11-19	Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer Kim, J. ; Jeong, S. M. ; Jeong, J. Electronics Letters, v.51, no.24, pp.2047 - 2048, 2015-11-19	543

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