Cited 0 time in
Cited 0 time in
Development of Organic Floating-Gate Memory Transistors
- Title
- Development of Organic Floating-Gate Memory Transistors
- Translated Title
- 유기 반도체를 이용한 플로팅 게이트 메모리 트랜지스터 개발
- Authors
- Soyeon Jeon
- DGIST Authors
- Soyeon Jeon; Jongmin Choi; Jiwoong Yang
- Advisor(s)
- 최종민
- Co-Advisor(s)
- Jiwoong Yang
- Issue Date
- 2021
- Available Date
- 2022-07-07
- Degree Date
- 2021/02
- Type
- Thesis
- Keywords
- Organic field-effect transistors, donor-acceptor copolymers, flash memory, high-performance, bias stability, 유기 전계 효과 트랜지스터, 플로팅 게이트, 플래시 메모리, 바이어스 안정성
- Abstract
- Organic flash memories that employ solution-processed polymer semiconductors preferentially require internal stability of their active channel layers. In this paper, a series of new donor-acceptor copolymers based on cyclopentadithiophene (CDT) and diketopyrrolopyrrole (DPP) are synthesized to obtain high per-formance and operational stability of nonvolatile floating-gate memory transistors with various additional donor units including thiophene, thiophene-vinylene-thiophene (CDT-DPP-TVT), selenophene, and seleno-phene-vinylene-selenophene. Detailed analyses on the photophysical, two-dimensional grazing incident X-ray diffraction, and bias-stress stability are discussed, which reveal that the CDT-DPP-TVT exhibits excellent bi-as-stress stability over 105 s. To utilize the robust nature of CDT-DPP-TVT, floating-gate transistors are fabri-cated by embedding Au nanoparticles between CytopTM layers as a charge storage site. The resulting memory devices reveal bi-stable current states with high on/off current ratio larger than 104 and each state can be dis-tinguished for more than 1 year, indicating a long retention time. Moreover, a repetitive writing-reading-erasing-reading test clearly supports the reproducible memory operation with reversible and reliable electrical responses. All these results suggest that the internal stability of CDT-DPP-TVT makes this copolymer a prom-ising material for application in reliable organic flash memory.
- Table Of Contents
- 1. Introduction 1
2. Experimental Section 3
2.1 Materials 3
2.2 Fabrication of OFETs and Memory Devices 3
2.3 Thin Film and Device Characterization 3
3. Results and Discussions 4
4. Conclusion 16
5. References 17
국문요약 21
- URI
- http://dgist.dcollection.net/common/orgView/200000361941
http://hdl.handle.net/20.500.11750/16650
- DOI
- 10.22677/thesis.200000361941
- Degree
- Master
- Department
- Energy Science & Engineering
- University
- DGIST
- Related Researcher
-
-
Choi, Jongmin
Chemical & Energy Materials Engineering (CEME) Laboratory
-
Research Interests
Advanced Metal Oxides; Colloidal Quantum Dots; Perovskite-Quantum Dot Hybrid Nanomaterials; Photocatalytic Materials
- Files:
-
- Collection:
- Department of Energy Science and EngineeringThesesMaster
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.