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Statistical Optimization of Compute In-Memory Performance under Device Variation

Title
Statistical Optimization of Compute In-Memory Performance under Device Variation
Author(s)
Crafton, BrianSpetalnick, SamuelYoon, Jong-HyeokRaychowdhury, Arijit
Issued Date
2021-07-26
Citation
IEEE International Symposium on Low-Power Electronics and Design, pp.1 - 6
Type
Conference Paper
ISBN
9781665439220
ISSN
1533-4678
Abstract
Compute in-memory (CIM) is a promising technique that minimizes data transport, maximizes memory throughput, and performs computation on the bitline of memory sub-arrays. Utilizing embedded non-volatile memories (eNVM) such as resistive random access memory (RRAM), various forms of neural networks can be implemented. Unfortunately, CIM faces new challenges traditional CMOS architectures have avoided. In this work, we explore the impact of device variation (calibrated with measured data on foundry RRAM arrays) and propose a new algorithm based on device variation to increase both performance and accuracy for CIM designs. We demonstrate up to 36% power improvement and 44% performance improvement, while satisfying any error constraint. © 2021 IEEE.
URI
http://hdl.handle.net/20.500.11750/46911
DOI
10.1109/ISLPED52811.2021.9502484
Publisher
Institute of Electrical and Electronics Engineers Inc.
Related Researcher
  • 윤종혁 Yoon, Jong-Hyeok
  • Research Interests Artificial intelligence; SLAM; edge intelligence; in-memory computing; multi-standard Ethernet transceiver design
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Appears in Collections:
Department of Electrical Engineering and Computer Science Intelligent Integrated Circuits and Systems Lab 2. Conference Papers

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