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Showing results 1 to 10 of 10

Conference
30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance
  • Spetalnick, Samuel D. ; 
  • Lele, Ashwin Sanjay ; 
  • Crafton, Brian ; 
  • Chang, Muya ; 
  • Ryu, Sigang ; 
  • Yoon, Jong-Hyeok ; 
  • Hao, Zhijian ; 
  • Ansari, Azadeh ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
    • et al
  • 2024-02-21
  • Spetalnick, Samuel D. (2024-02-21). 30.1 A 40nm VLIW Edge Accelerator with 5MB of 0.256pJ/b RRAM and a Localization Solver for Bristle Robot Surveillance. International Solid-State Circuits Conference, 482–484. doi: 10.1109/ISSCC49657.2024.10454500
  • IEEE Solid-State Circuits Society
  • View : 296
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Article
A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding
  • Yoon, Jong-Hyeok ; 
  • Chang, Muya ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
  • Chang, Meng-Fan ; 
  • Raychowdhury, Arijit
  • 2022-03
  • Yoon, Jong-Hyeok. (2022-03). A 40-nm 118.44-TOPS/W Voltage-Sensing Compute-in-Memory RRAM Macro With Write Verification and Multi-Bit Encoding. IEEE Journal of Solid-State Circuits, 57(3), 845–857. doi: 10.1109/JSSC.2022.3141370
  • Institute of Electrical and Electronics Engineers
  • View : 320
  • Download : 0
Article
A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection
  • Yoon, Jong-Hyeok ; 
  • Chang, Muya ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
  • Chang, Meng-Fan ; 
  • Raychowdhury, Arijit
  • 2022-01
  • Yoon, Jong-Hyeok. (2022-01). A 40-nm, 64-Kb, 56.67 TOPS/W Voltage-Sensing Computing-In-Memory/Digital RRAM Macro Supporting Iterative Write With Verification and Online Read-Disturb Detection. IEEE Journal of Solid-State Circuits, 57(1), 68–79. doi: 10.1109/jssc.2021.3101209
  • Institute of Electrical and Electronics Engineers
  • View : 504
  • Download : 0
Conference
A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation
  • Yoon, Jong-Hyeok ; 
  • Chang, Muya ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
  • Chang, Meng-Fan ; 
  • Raychowdhury, Arijit
  • 2021-04-29
  • Yoon, Jong-Hyeok. (2021-04-29). A 40nm 100Kb 118.44TOPS/W Ternary-weight Computein-Memory RRAM Macro with Voltage-sensing Read and Write Verification for reliable multi-bit RRAM operation. IEEE Custom Integrated Circuits Conference (CICC 2021), 152–153. doi: 10.1109/CICC51472.2021.9431412
  • IEEE Solid-State Circuits Society
  • View : 130
  • Download : 0
Conference
A GaN-Based Reconfigurable Series-Parallel Hybrid Converter Supporting 48/24/12V Input and 0.8-1.2V Output with 83.7/87.8/90.7% Peak Efficiency
  • Gong, Minxiang ; 
  • Chen, Hua ; 
  • Chang, Muya ; 
  • Yoon, Jong-Hyeok ; 
  • Zhang, Xin ; 
  • Jain, Rinkle ; 
  • Raychowdhury, Arijit
  • 2023-03-22
  • Gong, Minxiang. (2023-03-22). A GaN-Based Reconfigurable Series-Parallel Hybrid Converter Supporting 48/24/12V Input and 0.8-1.2V Output with 83.7/87.8/90.7% Peak Efficiency. Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2023, 912–918. doi: 10.1109/APEC43580.2023.10131253
  • IEEE Industry Applications Society
  • View : 119
  • Download : 0
Article
An Edge Accelerator With 5 MB of 0.256-pJ/bit Embedded RRAM and a Localization Solver for Bristle Robot Surveillance
  • Spetalnick, Samuel D. ; 
  • Lele, Ashwin Sanjay ; 
  • Crafton, Brian ; 
  • Chang, Muya ; 
  • Ryu, Sigang ; 
  • Yoon, Jong-Hyeok ; 
  • Hao, Zhijian ; 
  • Ansari, Azadeh ; 
  • Khwa, Win-San ; 
  • Chih, Yu-Der ; 
    • et al
  • 2025-01
  • Spetalnick, Samuel D. (2025-01). An Edge Accelerator With 5 MB of 0.256-pJ/bit Embedded RRAM and a Localization Solver for Bristle Robot Surveillance. IEEE Journal of Solid-State Circuits, 60(1), 35–48. doi: 10.1109/JSSC.2024.3457676
  • Institute of Electrical and Electronics Engineers
  • View : 98
  • Download : 0
Article
BitS-Net: Bit-Sparse Deep Neural Network for Energy-Efficient RRAM-Based Compute-In-Memory
  • 2022-05
  • Karimzadeh, Foroozan. (2022-05). BitS-Net: Bit-Sparse Deep Neural Network for Energy-Efficient RRAM-Based Compute-In-Memory. IEEE Transactions on Circuits and Systems I: Regular Papers, 69(5), 1952–1961. doi: 10.1109/TCSI.2022.3145687
  • Institute of Electrical and Electronics Engineers
  • View : 311
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Conference
Characterization and Mitigation of IR-Drop in RRAM-based Compute In-Memory
  • Crafton, Brian ; 
  • Talley, Connor ; 
  • Spetalnick, Samuel ; 
  • Yoon, Jong-Hyeok ; 
  • Raychowdhury, Arijit
  • 2022-05-30
  • Crafton, Brian. (2022-05-30). Characterization and Mitigation of IR-Drop in RRAM-based Compute In-Memory. IEEE International Symposium on Circuits and Systems (ISCAS 2022), 70–74. doi: 10.1109/ISCAS48785.2022.9937307
  • IEEE Circuits and Systems Society
  • View : 133
  • Download : 0
Conference
Improving compute in-memory ECC reliability with successive correction
  • Crafton, Brian ; 
  • Wan, Zishen ; 
  • Spetalnick, Samuel ; 
  • Yoon, Jong-Hyeok ; 
  • Wu, Wei ; 
  • Tokunaga,Carlos ; 
  • De, Vivek ; 
  • Raychowdhury, Arijit
  • 2022-07-13
  • Crafton, Brian. (2022-07-13). Improving compute in-memory ECC reliability with successive correction. Design Automation Conference, 745–750. doi: 10.1145/3489517.3530526
  • Association for Computing Machinery
  • View : 133
  • Download : 0
Conference
Statistical Optimization of Compute In-Memory Performance under Device Variation
  • Crafton, Brian ; 
  • Spetalnick, Samuel ; 
  • Yoon, Jong-Hyeok ; 
  • Raychowdhury, Arijit
  • 2021-07-26
  • Crafton, Brian. (2021-07-26). Statistical Optimization of Compute In-Memory Performance under Device Variation. IEEE International Symposium on Low-Power Electronics and Design, 1–6. doi: 10.1109/ISLPED52811.2021.9502484
  • Institute of Electrical and Electronics Engineers Inc.
  • View : 109
  • Download : 0
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