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Article
Abstraction of Blue Photoluminescence in Al-Doped ZnO Nanoparticles Prepared by Electron Beam Deposition
  • Kim, Jung-Hye ; 
  • Shin, Tae-Ho ; 
  • Yang, Kee-Jeong ; 
  • Jeong, Jaewook ; 
  • Choi, Byeongdae
  • 2012-01
  • Kim, Jung-Hye. (2012-01). Abstraction of Blue Photoluminescence in Al-Doped ZnO Nanoparticles Prepared by Electron Beam Deposition. Applied Physics Express, 5(1). doi: 10.1143/APEX.5.012603
  • JAPAN SOC APPLIED PHYSICS
  • View : 1410
  • Download : 0

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Article
Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
  • Jeong, Jaewook ; 
  • Kim, Joonwoo ; 
  • Kim, Donghyun ; 
  • Jeon, Heonsu ; 
  • Jeong, Soon Moon ; 
  • Hong, Yongtaek
  • 2016-08
  • AIP Advances, v.6, no.8
  • American Institute of Physics Publishing
  • View : 920
  • Download : 76
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 511
  • Download : 0
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 1037
  • Download : 0

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Article
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
  • Kim, Joonwoo ; 
  • Myung, Sung ; 
  • Noh, Hee-Yeon ; 
  • Jeong, Soon Moon ; 
  • Jeong, Jaewook
  • 2015-09
  • AIP Advances, v.5, no.9
  • American Institute of Physics Publishing
  • View : 1135
  • Download : 78
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • Jeong, J. ; 
  • Kim, J. ; 
  • Lee, G. J. ; 
  • Choi, B. -D.
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 239
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • Jeong, Jae Wook ; 
  • Kim, Joonwoo ; 
  • Lee, Gwang Jun ; 
  • Choi, Byeongdae
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
  • View : 928
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Red photoluminescence and blue-shift caused by phase transformation in multilayer films of titanium dioxide and zinc sulfide

Article
Red photoluminescence and blue-shift caused by phase transformation in multilayer films of titanium dioxide and zinc sulfide
  • Choi, Byeongdae ; 
  • Shim, Hyunseok ; 
  • Allabergenov, Bunyod
  • 2015-10
  • Choi, Byeongdae. (2015-10). Red photoluminescence and blue-shift caused by phase transformation in multilayer films of titanium dioxide and zinc sulfide. Optical Materials Express, 5(10), 2156–2163. doi: 10.1364/OME.5.002156
  • OSA - The Optical Society
  • View : 1180
  • Download : 212
Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 1016
  • Download : 0
Article
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
  • 2015-11
  • Electronics Letters, v.51, no.24, pp.2047 - 2048
  • Institution of Engineering and Technology
  • View : 923
  • Download : 0
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