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Showing results 1 to 7 of 7

Article
Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
  • 2011-08
  • Son, Dae-Ho. (2011-08). Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors. Thin Solid Films, 519(20), 6815–6819. doi: 10.1016/j.tsf.2011.04.079
  • Elsevier
  • View : 807
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Article
Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor
  • 2012
  • Kim, Dae-Hwan. (2012). Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor. Molecular Crystals and Liquid Crystals, 564(1), 130–137. doi: 10.1080/15421406.2012.691705
  • Taylor and Francis Ltd.
  • View : 135
  • Download : 0

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Article
Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
  • Jeong, Jaewook ; 
  • Kim, Joonwoo ; 
  • Kim, Donghyun ; 
  • Jeon, Heonsu ; 
  • Jeong, Soon Moon ; 
  • Hong, Yongtaek
  • 2016-08
  • AIP Advances, v.6, no.8
  • American Institute of Physics Publishing
  • View : 845
  • Download : 76
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 419
  • Download : 0
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 924
  • Download : 0
Article
High performance and the low voltage operating InGaZnO thin film transistor
  • 2010-11
  • Son, Dae-ho. (2010-11). High performance and the low voltage operating InGaZnO thin film transistor. Current Applied Physics, 10(4), E157–E160. doi: 10.1016/j.cap.2010.03.012
  • Elsevier B.V.
  • View : 938
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Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 913
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