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Issue Date Title Author(s) Journal View
2015-11
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

Kim, Joonwoo ;  Jeong, Soon Moon ;  Jeong, Jaewook

Japanese Journal of Applied Physics, v.54, no.11, 2015-11

 683
2015-11-19
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

Kim, J. ;  Jeong, S. M. ;  Jeong, J.

Electronics Letters, v.51, no.24, pp.2047 - 2048, 2015-11-19

 543
2015-10-25
Work function tuning and fluorescence enhancement of hydrogen annealed Ag-doped Al-rich zinc oxide nanostructures using a sol-gel process

Khan, Firoz ;  Baek, Seong-Ho ;  Lee, Jae Young ;  Kim, Jae Hyun

Journal of Alloys and Compounds, v.647, pp.566 - 572, 2015-10-25

 524
2015-09
Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se-2 thin films

Ko, Byoung-Soo ;  Sung, Shi-Joon ;  Hwang, Dae-Kue

Thin Solid Films, v.590, pp.330 - 334, 2015-09

 523
2015-08
Growth and Device Characteristics of CZTSSe Thin-Film Solar Cells with 8.03% Efficiency

Son, Dae-Ho ;  Kim, Dae-Hwan ;  Park, Si-Nae ;  Yang, Kee-Jeong ;  Nam, Dahyun ;  Cheong, Hyeonsik ;  Kang, Jin-Kyu

Chemistry of Materials, v.27, no.15, pp.5180 - 5188, 2015-08

 397
2015-12
Effects of a pre-annealing treatment (PAT) on Cu2ZnSn(S,Se)(4) thin films prepared by rapid thermal processing (RTP) selenization

Hwang, Sunwook ;  Kim, Dae-Hwan ;  Son, Dae-Ho ;  Yang, Kee-Jeong ;  Nam, Dahyun ;  Cheong, Hyeonsik ;  Kang, Jin-Kyu ;  In, Su-il

Solar Energy Materials and Solar Cells, v.143, pp.218 - 225, 2015-12

 602
2015-09

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Kim, Joonwoo ;  Myung, Sung ;  Noh, Hee-Yeon ;  Jeong, Soon Moon ;  Jeong, Jaewook

AIP Advances, v.5, no.9, 2015-09

 656
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