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Issue Date Title Author(s) Journal View
2015-11
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

Kim, Joonwoo ;  Jeong, Soon Moon ;  Jeong, Jaewook

Japanese Journal of Applied Physics, v.54, no.11, 2015-11

 689
2011-11-10
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors

Jeong, J. ;  Kim, J. ;  Lee, G. J. ;  Choi, B. -D.

Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10

 644
2015-11-19
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer

Kim, J. ;  Jeong, S. M. ;  Jeong, J.

Electronics Letters, v.51, no.24, pp.2047 - 2048, 2015-11-19

 550
2016-08

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Jeong, Jaewook ;  Kim, Joonwoo ;  Kim, Donghyun ;  Jeon, Heonsu ;  Jeong, Soon Moon ;  Hong, Yongtaek

AIP Advances, v.6, no.8, 2016-08

 640
2016-07

Optical and photoelectric properties of Mn-doped ZnS thin film on a flexible indium-tin-oxide/polyethylene terephthalate substrate prepared by pulsed laser deposition

Optical and photoelectric properties of Mn-doped ZnS thin film on a flexible indium-tin-oxide/polyethylene terephthalate substrate prepared by pulsed laser deposition

Choi, Byeongdae ;  Shim, Hyunseok ;  Allabergenov, Bunyod ;  Lee, Myoung-Jae

Optical Materials Express, v.6, no.7, pp.2336 - 2341, 2016-07

 609
2011-11-10
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors

Jeong, J. ;  Kim, J. ;  Lee, G. J. ;  Choi, B. -D.

Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10

 32
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