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Issue Date	Title Author(s) Journal	View
2015-11	Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment Kim, Joonwoo ; Jeong, Soon Moon ; Jeong, Jaewook Japanese Journal of Applied Physics, v.54, no.11, 2015-11	689
2015-10	Optical Properties of Cu-Doped ZnO Films Prepared by Cu Solution Coating Allabergenov, Bunyod ; Chung, Seok-Hwan ; Kim, Sungjin ; Choi, Byeongdae Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7664 - 7670, 2015-10	629
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	644
2015-11-19	Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer Kim, J. ; Jeong, S. M. ; Jeong, J. Electronics Letters, v.51, no.24, pp.2047 - 2048, 2015-11-19	550
2011-11-10	Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors Jeong, J. ; Kim, J. ; Lee, G. J. ; Choi, B. -D. Electronics Letters, v.47, no.23, pp.1295 - 1297, 2011-11-10	32
2016-12	Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment Lee, Sunghun ; Park, Jung-Bong ; Lee, Myoung-Jae ; Boland, John J. AIP Advances, v.6, no.12, 2016-12	649

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