Browsing by Titles

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 14 of 14

Article
Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor
  • Kang, Jae Wook ; 
  • Park, Kyung Won ; 
  • Park, Byung Nam ; 
  • Moon, Kyo Ho ; 
  • Choi, Sie Young ; 
  • Shon, Young-Soo
  • 2006-12
  • Kang, Jae Wook. (2006-12). Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor. Molecular Crystals and Liquid Crystals, 459(1), 157–165. doi: 10.1080/15421400600930136
  • Taylor & Francis
  • View : 334
  • Download : 0
Article
Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor
  • Kang, Jae Wook ; 
  • Park, Kyung Won ; 
  • Park, Byung Nam ; 
  • Moon, Kyo Ho ; 
  • Choi, Sie Young ; 
  • Shon, Young-Soo
  • 2006-12
  • Kang, Jae Wook. (2006-12). Effect of a-SiN : H thin film deposited by PE/RACVD on a-Si : H thin film transistor. Molecular Crystals and Liquid Crystals, 459(1), 157–165. doi: 10.1080/15421400600930136
  • Taylor & Francis
  • View : 955
  • Download : 0
Article
Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors
  • 2011-08
  • Son, Dae-Ho. (2011-08). Effect of hafnium addition on the electrical properties of indium zinc oxide thin film transistors. Thin Solid Films, 519(20), 6815–6819. doi: 10.1016/j.tsf.2011.04.079
  • Elsevier
  • View : 878
  • Download : 0
Article
Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor
  • 2012
  • Kim, Dae-Hwan. (2012). Effect of Zr Addition on Sol-Gel Processed InZrZnO Thin-Film Transistor. Molecular Crystals and Liquid Crystals, 564(1), 130–137. doi: 10.1080/15421406.2012.691705
  • Taylor and Francis Ltd.
  • View : 235
  • Download : 0

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Article
Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor
  • Jeong, Jaewook ; 
  • Kim, Joonwoo ; 
  • Kim, Donghyun ; 
  • Jeon, Heonsu ; 
  • Jeong, Soon Moon ; 
  • Hong, Yongtaek
  • 2016-08
  • AIP Advances, v.6, no.8
  • American Institute of Physics Publishing
  • View : 914
  • Download : 76
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 500
  • Download : 0
Article
Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process
  • 2010
  • Park, Mi Sun. (2010). Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process. Molecular Crystals and Liquid Crystals, 529, 137–146. doi: 10.1080/15421406.2010.495892
  • Taylor and Francis Ltd.
  • View : 1029
  • Download : 0

Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode

Article
Gate voltage and drain current stress instabilities in amorphous In-Ga-Zn-O thin-film transistors with an asymmetric graphene electrode
  • Kim, Joonwoo ; 
  • Myung, Sung ; 
  • Noh, Hee-Yeon ; 
  • Jeong, Soon Moon ; 
  • Jeong, Jaewook
  • 2015-09
  • AIP Advances, v.5, no.9
  • American Institute of Physics Publishing
  • View : 1123
  • Download : 78
Article
High performance and the low voltage operating InGaZnO thin film transistor
  • 2010-11
  • Son, Dae-ho. (2010-11). High performance and the low voltage operating InGaZnO thin film transistor. Current Applied Physics, 10(4), E157–E160. doi: 10.1016/j.cap.2010.03.012
  • Elsevier B.V.
  • View : 1009
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • Jeong, J. ; 
  • Kim, J. ; 
  • Lee, G. J. ; 
  • Choi, B. -D.
  • 2011-11-10
  • Jeong, J. (2011-11-10). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institution of Engineering and Technology
  • View : 233
  • Download : 0
Article
Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors
  • Jeong, Jae Wook ; 
  • Kim, Joonwoo ; 
  • Lee, Gwang Jun ; 
  • Choi, Byeongdae
  • 2011-11
  • Jeong, Jae Wook. (2011-11). Numerical analysis of effects of back channel interfacial states on characteristics of amorphous InGaZnO thin-film transistors. Electronics Letters, 47(23), 1295–1297. doi: 10.1049/el.2011.2024
  • Institute of Electrical Engineers
  • View : 923
  • Download : 0
Article
Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment
  • 2015-11
  • Japanese Journal of Applied Physics, v.54, no.11
  • Institute of Physics Publishing
  • View : 1009
  • Download : 0
Article
Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature
  • Song, Ju-Il ; 
  • Park, Jae-Soung ; 
  • Kim, Howoon ; 
  • Heo, Young-Woo ; 
  • Lee, Joon-Hyung ; 
  • Kim, Jeong-Joo ; 
  • Kim, G. M. ; 
  • Choi, Byeongdae
  • 2007-01
  • Song, Ju-Il. (2007-01). Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature. doi: 10.1063/1.2430917
  • American Institute of Physics
  • View : 844
  • Download : 0
Article
Transparent thin-film transistor and diode circuit using graphene and amorphous indium-gallium-zinc-oxide active layer
  • 2015-11
  • Electronics Letters, v.51, no.24, pp.2047 - 2048
  • Institution of Engineering and Technology
  • View : 914
  • Download : 0
1